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Effect of Pauli principle on transport properties of some crystalline compound semiconductors

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Czechoslovak Journal of Physics B Aims and scope

Abstract

The effect of Pauli principle on drift velocity is studied numerically for n-type tetrahedral semiconductors (GaAs, InP, CdTe, InAs and InSb). The method used is the standard quasiclassical Monte Carlo simulation. The electron concentrations range from 1015 cm−3 to 1019 cm−3. The Pauli principle effects become important above 1017 cm−3.

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Author notes

  1. J. Maršík

    Present address: TESLA-Electronics Research Institute, Novodvorská 994, 142 21, Praha 4, Czechoslovakia

Authors and Affiliations

  1. Institute of Physics, Czechosl. Acad. Sci., Na Slovance 2, 180 40, Praha 8, Czechoslovakia

    J. Maršík & K. Král

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  1. J. Maršík
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  2. K. Král
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The authors would like to express their thanks to Dr. Z. Khás and Mr. P. Štěpánek for their help in the course of programming and computations.

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Maršík, J., Král, K. Effect of Pauli principle on transport properties of some crystalline compound semiconductors. Czech J Phys 35, 1180–1188 (1985). https://doi.org/10.1007/BF01596433

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  • DOI: https://doi.org/10.1007/BF01596433

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