Abstract
The expressions for current-voltage characteristics of single injection current flow in solid state cylindrical diode containing significant amount of deep traps have been derived with the help of regional approximation method. It is shown that the complete current-voltage characteristic may be divided into well separated current-voltage regimes and the last regime is the pure space-charge-limited trap free regime. The role of deep traps is specially explained in the complete span of current-voltage characteristic.
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References
Kao K. C., Hwang W.: Electrical Transport in Solids. Pergamon Press, New York, 1981.
Lampert M. A., Mark P.: Current Injection in Solids. Academic Press, New York, 1970.
Sharma Y. K.: Phys. Rev. B10 (1974) 3273.
Sharma Y. K.: J. Appl. Phys.50 (1979) 5381.
Sharma Y. K.: J. Appl. Phys.53 (1982) 1241.
Board K.: Rep. Prog. Phys.48 (1985) 1595.
De Blasie C., Micocci G., Rizzo A., Tapore A.: Solid-State Electronics26 (1983) 1095.
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Hussain, S.A., Sharma, Y.K. & Sharma, N.K. Single injection current in solid state cylindrical diodes with deep traps. Czech J Phys 38, 787–793 (1988). https://doi.org/10.1007/BF01596339
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DOI: https://doi.org/10.1007/BF01596339