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Electronic structure of the Ge/RbF/GaAs(100) heterostructure: LCAO calculations

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Czechoslovak Journal of Physics Aims and scope

Abstract

The electronic structure of Ge/RbF/GaAs(100) system has been calculated using a slab model and the LCAO method. This system, with possible applications in microelectronics, is a model one with perfectly epitaxial interfaces, little is known however about their reactivity. In these calculations the reactive contacts were postulated and modelled. The obtained results, compared with those of trial calculations for similar non-interacting system, show the appearance of a rich spectrum of interface states at the contacts. They are compared with known experimental results and their possible effects are discussed.

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Authors and Affiliations

  1. Institute of Experimental Physics, University of Wrocław, pl. Borna, 9, 50-204, Wrocław, Poland

    Barbara Stankiewicz

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  1. Barbara Stankiewicz
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Additional information

This work was sponsored by the State Committee for Scientific Research (KBN) via the Grant No. 2 0123 91 01.

The author wishes to thank Professor Maria Steślicka for her constant encouragement and valuable discussions. Thanks are also due to Mr. M. Maciejewski for his help in numerical procedures and to Dr. W. Kisiel for his consultations and assistance in preparing the manuscript.

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Stankiewicz, B. Electronic structure of the Ge/RbF/GaAs(100) heterostructure: LCAO calculations. Czech J Phys 43, 1019–1022 (1993). https://doi.org/10.1007/BF01595296

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  • DOI: https://doi.org/10.1007/BF01595296

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