Abstract
The Raman scattering method has been successfully used to investigate the properties of GeSi alloys deposited on Ge substrates in this paper. The effect of Si composition and strain in the GeSi alloy on the Raman shifts of Ge-Ge, Ge-Si and Si-Si phonon modes is studied. The relationship between them have been derived by the assumption that the Raman shifts is nearly linear with Si composition and strain in the GeSi alloys. The experimental data show reasonable agreement with the fits.
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References
F. Meyer, M. Zafrany, M. Eizenberg, R. Beserman, C. Schwebel, C. Pellet: J. Appl. Phys.70, 4268 (1991)
R. Zhang, Y. Zhang, S. Gu, L. Hu: Mater. Res. Soc. Symp. Proc.298, 145 (1993)
Z. Sui, I.P. Herman, J. Bevk: Appl. Phys. Lett.58, 2352 (1991)
D.J. Lockwood, J.M. Baribrau: Phys. Rev. B45, 8565 (1992)
C. Lee, K.L. Wang: Appl. Phys. Lett.64, 1256 (1994)
R. People: Phys. Rev. B34, 2508 (1986)
P.M. Mooney, F.H. Dacol, J.C. Tsang, J.O. Chu: Appl. Phys. Lett.62, 2069 (1993)
J.C. Tsang, P.M. Mooney, F. Dacol, J.D. Chu: J. Appl. Phys.75, 8098 (1994)
A. Pinczuk, E. Burstein: InLight Scattering in Solids I, ed. by M. Cardona, Topics Appl. Phys., Vol. 8 (Springer, Berlin, Heidelberg 1975) p. 23
Y. Zheng, R. Zhang, R. Jiang, L. Hu, P. Zhong, S. Mo, S. Yu, Q. Li, D. Feng: InProc. 20th ICPS, ed. by E. M. Anastassakis, J.D. Joannopulos (World Scientific, Singapore 1990) p. 869
P. Zhong, Y. Zheng, R. Zhang, L. Hu: Appl. Phys. Lett.61, 79 (1992)