Skip to main content
SpringerLink
Log in

Boron electrical activation in dual B+ + N+ + and B+ + Ar+ ion-implanted silicon

  • Published:
Applied Physics A Aims and scope Submit manuscript

Abstract

Silicon wafers were implanted with 40 keV B+ ions and then with 50 keV N+ or 100 keV Ar+ ions to doses from 1.2 x 1014 to 1.2 x 1015 cm−2. The implanted samples were studied using the Hall effect and standard van der Pauw methods. The dependences of the sheet resistivity and the sheet concentration of charge carriers on the annealing temperature in the range from 700 to 1300 K were obtained. Models describing the influence of additional implantation of nitrogen and argon ions on the process of boron electrical activation during annealing are proposed.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Similar content being viewed by others

References

  1. V.F. Stelmakh; YuR. Suprun-Belevich, A.R. Chelyadinskii: Phys. Stat. Sol. (a)112, 381 (1989)

    Google Scholar 

  2. S. Nishikava, A. Tanaka, T. Yamaji: Appl. Phys. Lett.60, 2270 (1992)

    Google Scholar 

  3. K. Holldack, H. Kerkow, W. Frentrup: Phys. Stat. Sol. (a)94, 357 (1986)

    Google Scholar 

  4. G.A. Kachurin, I.E. Tyschenko: Fiz. Tekh. Poluprov.27, 1194 (1993) (in Russian)

    Google Scholar 

  5. I.R. Sanders, B.D. Williams, B.J. Smith, J. Stephen, G.W. Hinder: Solid-State Electron.20, 703 (1977)

    Google Scholar 

  6. M. Delfino, A. Milgram, M.D. Strathman: Appl. Phys. Lett.44, 594 (1984)

    Google Scholar 

  7. V.B. Odzhaev, V.N. Popok, J. Cervena, V. Hnatowicz, J. Kvítek, J. Vacik: Phys. Stat. Sol. (a)147, 91 (1995)

    Google Scholar 

  8. G.D. Watkins: TOP Conf. Ser.23, 1 (1974) (Institute of Physics, London 1975)

    Google Scholar 

  9. N.I. Berezhnov, A.R. Chelyadinskii, M. Jadan, Yu.R. Suprun-Belevich: Nucl. Instrum. Methods B73, 357 (1993)

    Google Scholar 

  10. V. Popok, V. Hnatowicz, J. Kvítek, V. Svorčík, V. Rybka: Phys. Stat. Sol. (a)142, 93 (1994)

    Google Scholar 

  11. A.V. Danilin, V.N. Mordkovich: Appl. Phys. Lett.59, 1570 (1991)

    Google Scholar 

  12. J.P. de Souza, H. Boudinov: J. Appl. Phys.74, 6599 (1993)

    Google Scholar 

  13. Y. Tokumaru, H. Okushi, T. Masui, T. Abe: Jpn. J. Appl. Phys.21, L443 (1982)

    Google Scholar 

  14. P.V. Pavlov, E.I. Zorin, D.I. Tetelbaum, A.F. Khohlov: Phys. Stat. Sol. (a)35, 11 (1976)

    Google Scholar 

Download references

Author information

Authors and Affiliations

  1. Belarusian State University, 220050, Minsk, Belarus

    V. B. Odzhaev, V. N. Popok & V. S. Prosolovich

  2. Institute of Nuclear Physics, Academy of Sciences of the Czech Republic, CZ-250 68, Rež, Czech Republic

    V. Hnatowicz

Authors
  1. V. B. Odzhaev
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. V. N. Popok
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. V. S. Prosolovich
    View author publications

    You can also search for this author in PubMed Google Scholar

  4. V. Hnatowicz
    View author publications

    You can also search for this author in PubMed Google Scholar

Rights and permissions

Reprints and permissions

About this article

Cite this article

Odzhaev, V.B., Popok, V.N., Prosolovich, V.S. et al. Boron electrical activation in dual B+ + N+ + and B+ + Ar+ ion-implanted silicon. Appl. Phys. A 62, 355–358 (1996). https://doi.org/10.1007/BF01594233

Download citation

  • Received:

  • Accepted:

  • Issue Date:

  • DOI: https://doi.org/10.1007/BF01594233

PACS

Search

Navigation