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Properties and nature of the main electron trap in GaAs

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Czechoslovak Journal of Physics B Aims and scope

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Authors and Affiliations

  1. Institute of Physics, Polish Acad. Sci., Al. Lotników 32/46, 02-668, Warszawa, Poland

    T. Figielski & T. Wosiński

Authors
  1. T. Figielski
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  2. T. Wosiński
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Additional information

Invited talk at the International Conference on Radiative Recombination and Related Phenomena in III–V Compound Semiconductors, Prague, 4–7 October, 1983.

The authors are grateful to Dr. A. Morawski and J. Domagała from their laboratory for discussions and for making available experimental results prior to publication.

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Figielski, T., Wosiński, T. Properties and nature of the main electron trap in GaAs. Czech J Phys 34, 403–408 (1984). https://doi.org/10.1007/BF01590081

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  • DOI: https://doi.org/10.1007/BF01590081

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