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High-excitation phenomena in doped III–V semiconductors

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Czechoslovak Journal of Physics B Aims and scope

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Authors and Affiliations

  1. Sektion Physik, Karl-Marx-Üniversität Leipzig, 7010, Leipzig, DDR

    R. Schwabe, I. Streit & K. Unger

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  1. R. Schwabe
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  2. I. Streit
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  3. K. Unger
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Abstract of the invited talk at the International on Conference Radiative Recombination and Related Phenomena in III–V Compound Semiconductors, Prague, 4–7 October, 1983.

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Schwabe, R., Streit, I. & Unger, K. High-excitation phenomena in doped III–V semiconductors. Czech J Phys 34, 402 (1984). https://doi.org/10.1007/BF01590080

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  • DOI: https://doi.org/10.1007/BF01590080

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