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The study of growth striations in silicon by means of X-ray reflection-double-crystal topography

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Czechoslovak Journal of Physics B Aims and scope

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Authors and Affiliations

  1. Department of Solid State Physics, J. E. Purkyně University, Kotlářská 2, 611 37, Brno, Czechoslovakia

    J. Kuběna & V. Holý

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  1. J. Kuběna
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  2. V. Holý
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Kuběna, J., Holý, V. The study of growth striations in silicon by means of X-ray reflection-double-crystal topography. Czech J Phys 34, 950–960 (1984). https://doi.org/10.1007/BF01589824

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  • DOI: https://doi.org/10.1007/BF01589824

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