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Thin layers of grey arsenic: A molecular orbital study

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Czechoslovak Journal of Physics Aims and scope

Abstract

A thin layer of grey arsenic has been manufactured by molecular beam epitaxy and its He(I) photoelectron spectrum has been recorded. The quasi-relativistic CNDO/1 method has been used to investigate the band structure of {As}114 and {As}228 clusters: the DOS profiles and their projections are under question. These data were correlated with the periodic crystal orbitals of the EHT quality. The first excitation energy serves as a better estimate of the energy gap between the filled valence band and the empty conduction band.

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Authors and Affiliations

  1. Department of Inorganic Chemistry, Slovak Technical University, Radlinského 9, 812 39, Bratislava, Slovak Republic

    R. Boča & P. Hajko

  2. Institute of Inorganic Chemistry, Slovak Acad. Sci., Dúbravská cesta, 842 35, Bratislava, Slovak Republic

    L'. Benco

  3. Department of Microelectronics, Slovak Technical University, Mlynská dolina 81219, Bratislava, Slovak Republic

    I. Benkovský & D. Faktor

Authors
  1. R. Boča
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  2. P. Hajko
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  3. L'. Benco
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  4. I. Benkovský
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  5. D. Faktor
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Boča, R., Hajko, P., Benco, L. et al. Thin layers of grey arsenic: A molecular orbital study. Czech J Phys 43, 813–819 (1993). https://doi.org/10.1007/BF01589803

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  • DOI: https://doi.org/10.1007/BF01589803

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