Skip to main content
SpringerLink
Log in

CO2-laser annealing of Al/a-Si:H contact

  • Published:
Czechoslovak Journal of Physics Aims and scope

Abstract

The paper concerns the possibility of using CW (continuous wave) CO2-laser annealing (λ=10.6 μm,P≤ 100 W/cm2) for formation of a barrier in the Al/a-Si:H/SS (SS-stainless steel) structures with good rectifyingI–V characteristics. The infrared absorption spectra, photoelectric properties, temperature effect on the conductivity and saturation current were analyzed and various contact models are discussed.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Similar content being viewed by others

References

  1. Madan A.:in The Physics of Hydrogenated Amorphous Silicon I (Eds. J. D. Joannopoulos, G. Lucovsky). Springer-Verlag, Berlin, 1984, p. 310.

    Google Scholar 

  2. Carlson D., Wronski C.:in Amorphous Semiconductors (Ed. M. H. Brodsky). Springer-Verlag, Berlin, 1979.

    Google Scholar 

  3. Chen I., Lee S.: J. Appl. Phys.53 (1982) 1045.

    Google Scholar 

  4. Sachenko A. V.: Fiz. Tekh. Polupr.17 (1983) 1782.

    Google Scholar 

  5. Il'chenko V. V., Strikha V. I.: Fiz. Tekh. Polupr.18 (1984) 873.

    Google Scholar 

  6. Krishna K. V., Guha S., Narasimhan K. L.: Solar Cells4 (1981) 5.

    Google Scholar 

  7. Bertolloti M., Ferrari A., Evangelisti F., Fiorini P., Prioetti M. G.: Zentrallinstitut für Kernforschung, Rossendorf bei Dresden555 (1985) 351.

    Google Scholar 

  8. Bertolotti M., Ferrari A., Evangelisti F., Fiorini P.: J. Non-Cryst. Solids90 (1987) 167.

    Google Scholar 

  9. Grosse P., Harbecke B., Heinz B., Meyer R.: Appl. Phys. A39 (1986) 257.

    Google Scholar 

  10. Hong C. S., Huang H. L.: J. Appl. Phys.61 (1987) 4593.

    Google Scholar 

  11. Xu X., Morimoto A., Kumeda M., Shimizu T.: Jpn. J. Appl. Phys.26 (1986) 661.

    Google Scholar 

  12. Vorobyov Yu. V., Kil'chitskaya S. S., Komirenko R. P., Litvinenko S. V., Skryshevsky V. A., Strikha V. L.: Fiz. Tekh. Polupr.20 (1986) 661.

    Google Scholar 

  13. Carlson D. E., Magee C. W.: App. Phys. Lett.33 (1978) 81.

    Google Scholar 

  14. Staebler D. L., Wronski C. R.: J. Appl. Phys.51 (1980) 3262.

    Google Scholar 

  15. Sabisky E. S.: J. Non-Cryst. Solids87 (1986) 43.

    Google Scholar 

  16. Adler D., Eberhart M., Johnson K., Zygmut S.: J. Non-Cryst. Solids66 (1984) 273.

    Google Scholar 

  17. Tawada Y., Nishimura K., Nonomura S., Okamoto H., Hamakawa Y.: Solar Cells9 (1983) 53.

    Google Scholar 

  18. Iwata S.: J. Jpn. Metals41 (1981) 5.

    Google Scholar 

  19. Fang P. H.: Solar Cells25 (1988) 27.

    Google Scholar 

  20. Strikha V. I.: The Contact Phenomena in Semiconductors. Kiev, 1982.

  21. Fang P. H., Bai P., Schubert C. C., Kinnier J. H.: J. Non-Cryst. Solids59/60 (1983) 819.

    Google Scholar 

Download references

Author information

Authors and Affiliations

  1. Department of Solid State Physics, Comenius University, Mlynska dolina F-2, 842 15, Bratislava, Slovak Republic

    H. Glesková

  2. Radiophysics Department, Shevchenko University, Vladimirskaya 64, 252017, Kiev, Ukraine

    V. V. Il'chenko, V. A. Skryshevsky & V. I. Strikha

Authors
  1. H. Glesková
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. V. V. Il'chenko
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. V. A. Skryshevsky
    View author publications

    You can also search for this author in PubMed Google Scholar

  4. V. I. Strikha
    View author publications

    You can also search for this author in PubMed Google Scholar

Additional information

We thank P. Čičmanec for useful and stimulating discussion, J. Stuchlík for kindly manufacturing the a-Si:H films for us and D. N. Goncharov for the aid with the measurement of the conductivity temperature dependences.

Rights and permissions

Reprints and permissions

About this article

Cite this article

Glesková, H., Il'chenko, V.V., Skryshevsky, V.A. et al. CO2-laser annealing of Al/a-Si:H contact. Czech J Phys 43, 169–178 (1993). https://doi.org/10.1007/BF01589639

Download citation

  • Received:

  • Revised:

  • Issue Date:

  • DOI: https://doi.org/10.1007/BF01589639

Keywords

Search

Navigation