Abstract
Using the approximative formula found by the author for the eigenvalues of Schrödinger equation for an electron in the screened coulombic field and the condition of the charge neutrality in partially compensated semiconductor, the ground-state and the first excited-state energy levels of shallow donors in n-type GaAs are computed for various donor concentrations and compensation ratios. The energy levels are found to be temperature dependent, which enables to explain the discrepancy between the ionization energies experimentally determined by optical methods at 4·2 K and those found by fitting the experimental temperature variation of the carrier concentration. The different values of the energies for the transition from the ground-state to the first excited-state at 4·2 K and at 15 K experimentally determined by other authors also confirm the temperature dependence of shallow donor levels which can be explained by the screening effect of conduction electrons.
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References
Summers C. J., Dingle R., Hill D. E., Phys. Rev.B 1 (1970), 1603.
Fetterman H. R., Larsen D. M., Stillman G. E., Tannenwald P. E., Phys. Rev. Lett.26 (1971), 975.
Stillman G. E., Larsen D. M., Wolfe C. M., Sol. St. Comm.9 (1971), 2245.
Berman L. V., Sabanova L. D., Sidorov V. J., FTP8 (1974), 2342.
Lockwood H. J., Appl. Phys.34 (1963), 2110.
Blakemore J. S., Semiconductor Statistics, Pergamon Press, Oxford, 1962 (Russian translation Izd. MIR, Moscow 1964, p. 143).
Pearson W. B., Bardeen J., Phys. Rev.75 (1949), 865.
Eddols D. V., phys. stat. sol.17 (1966), 67.
Wolfe C. M., Stillman G. E., Lindley W. T., J. Appl. Phys.41 (1970), 3088.
Hughes F. D., Tree R. J., J. Phys. C, Sol. St. Phys.3 (1970), 1943.
Crandall R. S., J. Phys. Chem. Sol.31 (1970), 2069.
Frieser Von A., Standte M., Neumann H., Flohrer U., Exp. Tech. d. Phys.XXII (1974), 273.
Pincherle L., Proc. Phys. Soc. LondonA 64 (1951), 663.
Bonch-Brujevich V. L., FTT Sb. Statej2 (1959), 177.
Bonch-Brujevich V. L., Glasko V. B., FTT4 (1962), 510.
Bonch-Brujevich V. L., Glasko V. B., Opt. i Spektr.XIV (1963), 495.
Rogers F. J., Grabovske H. C., Harwood D. J., Jr., Phys. Rev.A 1 (1970), 1577.
Emel'janko O. V., Lagunova T. S., Nasledov D. M., Talakin G. N., FTT7 (1965), 1315.
Hrivnák L'., Acta Phys. Slovaca (to be published).
Shah J., Leite R. C. C., Gordon J. P., Phys. Rev.176 (1968), 938.
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Hrivnák, L. The screening influence of the conduction electrons on the shallow donor levels in n-type GaAs. Czech J Phys 26, 670–676 (1976). https://doi.org/10.1007/BF01589597
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DOI: https://doi.org/10.1007/BF01589597