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Contribution to the problem of the influence of the electric field on the conductivity of amorphous semiconductors

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Czechoslovak Journal of Physics B Aims and scope

Abstract

On the base of a polycrystalline model of amorphous material the possible mechanism of the influence of the electric field on the conductivity of amorphous semiconductors is explained. It is supposed that multiple tunnelling takes place through the barriers between the crystallites while in consequence of the work performed by the field the electron gets into the region of high mobility (i.e. into the energy region corresponding to high mobility).

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Authors and Affiliations

  1. Department of Physics, Electrotechnical Faculty, Slovak Technical University, Bratislava, Gottwaldovo nám. 2, 880 19, Bratislava, Czechoslovakia

    I. Baník

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  1. I. Baník
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Finally I would like to express my gratitude to Doc. Dr.Ivan Náter for his help and useful discussion about problems of mainly mathematical character in connection with the presented work. I thank Doc.Julius Krepanský, DrSc, Ing.Štefan Bárta, CSc, Dr.Jozef Zámečník, and Ing.Peter Dieška for valuable remarks.

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Baník, I. Contribution to the problem of the influence of the electric field on the conductivity of amorphous semiconductors. Czech J Phys 25, 552–566 (1975). https://doi.org/10.1007/BF01589429

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  • DOI: https://doi.org/10.1007/BF01589429

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