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Thermoelectric power and electrical conductivity of sputtered amorphous germanium: Effect of annealing

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Czechoslovak Journal of Physics B Aims and scope

Abstract

Detailed measurements of the temperature dependence of dc electrical conductivityσ(T) and the thermoelectric powerS(T) at different annealing stages of sputtered amorphous (a-Ge) and polycrystalline germanium (c-Ge) layers in the range 80–430 K are reported. The sign ofS of the polycrystalline layers is positive. On the other hand the sign ofS of the a-Ge is always negative. At low temperature theS(T) dependences of a-Ge are constant and weakly depend on annealing. In the high temperature region the ¦S(T)¦ curves reach maximum values and depend relatively strongly on annealing. In the low temperature range theσ(T) dependences satisfy the T−1/4 Mott's law. Annealing shifts theσ(T) towards lower values especially at low temperature. Theσ(T) andS(T) data of a-Ge are discussed on the basis of a proposed model of the hopping conduction within the mobility gap.

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Authors and Affiliations

  1. Institute of Solid State Physics, Czechosl. Acad. Sci., Prague, Cukrovarnická 10, 162 53, Praha 6, Czechoslovakia

    J. Zemek

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  1. J. Zemek
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The author expresses thanks to Dr. S.Koc, Dr. Z.Šimša, Dr. V.Vorlíček and Dr. I.Gregora for helpful discussions.

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Zemek, J. Thermoelectric power and electrical conductivity of sputtered amorphous germanium: Effect of annealing. Czech J Phys 27, 1145–1151 (1977). https://doi.org/10.1007/BF01589005

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  • DOI: https://doi.org/10.1007/BF01589005

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