Conclusions
We tried to measure transient conductivity response to pulse strongly absorbed excitation (light, accelerated electrons) in sandwich type samples of glassy CdGe x As2 compounds. We observed the signal due to transport of free excess carriers. From analysis of experimental results we conclude that in our materials strong trapping effects are present, so the range of excited carriers is very short (10−4-10−3 cm) even in the highest electrical fields used (to 104 V. cm−1). Estimates of upper limit of drift mobility give the values 10−1- 1 cm2 V−1 sec−1. We did not succeed in determining the type of carriers which are responsible for the observed effects.
Similar content being viewed by others
References
Haynes J. R., Shockley W., Phys. Rev.75 (1949), 691.
Spear W. E., J. Non.-Cryst. Solids1 (1969), 197.
Martini M.,Mayer J. W.,Zanio K. R., Appl. Solid State Science3 (ed. R. Wolfe), (1972), 181.
Tabak M. D., Warter P. J., Phys. Rev.173 (1968), 899.
LeComber P. G., Nadan A., Spear W. E., J. Non-Cryst. Solids11 (1972), 219.
Pai D. M., J. Chem. Phys.52 (1970), 2285.
Kolomijec B. T., Lebedev E. A., Fiz. tverdogo tela8 (1966), 1136.
Scharfe M. E., Phys. Rev.B 2 (1970), 5025.
Hrubý A., Štourač L., Mat. Res. Bull.4 (1969), 745;Hrubý A.,Štourač L., Mat. Res. Bull.6 (1971), 247;Hruby A.,Houserová J., Czech. J. Phys.B 22 (1972), 89.
Škácha J., to be published.
Abrahám A., Vorlíček V., Čs. čas. fyz.A 22 (1972), 217.
van Roosbroeck W., Cassey H. C., Phys. Rev.B5 (1972), 2154.
Döhler G. H., Heyszenan H., Amorphous and Liquid Semiconductors. Proc. 5th Int. Conf., Garmisch-Partenkirchen 1973, p. 177. Taylor and Francis, London 1974.
Author information
Authors and Affiliations
Rights and permissions
About this article
Cite this article
Škácha, J. Drift mobility and kinetics of transport of excess charge carriers in glassy CdGexAs2 . Czech J Phys 25, 1397–1401 (1975). https://doi.org/10.1007/BF01587562
Received:
Issue Date:
DOI: https://doi.org/10.1007/BF01587562