Abstract
The formation of thin dielectric SiO2 films on n-type GaAs substrates and obtained results on the investigation of their physical and chemical parameters are described. The SiO2 films are produced by low-temperature deposition of tetraethoxisilane in the continuous flow system with argon as a carrier gas. Some of the technological aspects of this preparation (as the growth conditions and proper apparatus) are discussed in great detail. For improvement of some typical parameters (infrared spectra, etch rate and permitivity) a suitable thermal treatment is recommended. From the results we have achieved, the potential possibilities for construction of various types of electronic devices are also proposed.
This is a preview of subscription content, log in via an institution to check access.
Similar content being viewed by others
References
Jordan E. L., J. Electrochem. Soc.108 (1961), 478.
Klerer J., J. Electrochem. Soc.112 (1965), 503.
Heunisch G. W., J. Electrochem. Soc.114 (1967), 642.
Oroschnik J., Kraitchman J., J. Electrochem. Soc.115 (1968), 649.
Krongelb S., Electrochem. Technology6 (1968), 252.
Kern W., White J. P., RCA Rev.31 (1970), 771.
Sato Y., Jap. J. Appl. Phys.7 (1968), 595.
Pliskin W. A., Lehman H. S., J. Electrochem. Soc.112 (1965), 1013.
Booker G. R., Benjamin C. E., J. Electrochem. Soc.109 (1962), 1206.
Sato K., J. Electrochem. Soc.117 (1970), 1065.
Pliskin W. A., Gnall R. P., J. Electrochem. Soc.111 (1964), 872.
Author information
Authors and Affiliations
Additional information
The authors wish to thank Ing. I.Srb for infrared spectra measurements. The technical assistance of Mrs. O.Janoušková is also greatly appreciated.
Rights and permissions
About this article
Cite this article
Fremunt, R., Šimeček, A. Thin SiO2 films on GaAs substrates. Czech J Phys 23, 391–397 (1973). https://doi.org/10.1007/BF01587293
Received:
Issue Date:
DOI: https://doi.org/10.1007/BF01587293