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Theory of electrical resistance of multivalley semiconductors with screw dislocations

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Czechoslovak Journal of Physics B Aims and scope

Abstract

The diffusion theory of electrical resistance in multivalley semiconductors of Si-type with screw dislocations is developed. Intervalley electron transitions are taken into account. The effect of the inhomogeneous dislocation distribution on the electrical resistance of the crystal is considered.

It is shown that randomly distributed dislocations having the mean density 1010 cm−2 contribute some percents to the electrical resistance at room temperature. Intervalley transitions make this contribution much lower (by one order or more). The inhomogeneity of dislocation distribution enhances the electrical resistance several orders as compared with randomly distributed dislocations.

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Authors and Affiliations

  1. Institute of Metal Physics, Acad. Sci. Ukrain. SSR, Kiev, 252 142, Kiev, USSR

    Yu. V. Kornyushin

  2. Institute of Solid State Physics, Czechosl. Acad. Sci., Prague, Cukrovarnická 10, Praha 6, Czechoslovakia

    P. Středa

Authors
  1. Yu. V. Kornyushin
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  2. P. Středa
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Kornyushin, Y.V., Středa, P. Theory of electrical resistance of multivalley semiconductors with screw dislocations. Czech J Phys 23, 348–355 (1973). https://doi.org/10.1007/BF01587290

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  • DOI: https://doi.org/10.1007/BF01587290

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