Abstract
The measurements of the spectra of Auger electrons of the silicon surfaces performed at the pressure of (2–5)×10−7 Torr are described. In this pressure range rapid oxidation and carbonization of the uppermost layers take place. The changes of characteristic energies in Auger and loss spectra are related to the change of chemical composition of the surface. The combination of the characteristic loss spectroscopy with Auger electron spectroscopy makes possible the determination of the chemical shifts. The measurements of the chemical shifts of the individual energy levels of the silicon atoms in both the pure and contaminated silicon surfaces, in quartz and Fe∶Si alloy are given. Finally, the possibilities and limitations of the heating for the silicon surface cleaning are examined.
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I am indebted to Prof. A.Delong for his continuous and helpful interest in my work. I thank to Mr. P.Vašina for the continuous assistance in the course of measurements. Finally, I thank to Prof. V.Drahoš, Dr. J.Komrska and Mr. M.Lenc for critical reading of the manuscript.
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Vlachová, B. Auger electron spectroscopy of silicon surfaces. Czech J Phys 23, 931–946 (1973). https://doi.org/10.1007/BF01586875
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DOI: https://doi.org/10.1007/BF01586875