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On the relation between the gap, the transformation temperature and the average heat of atomization of As2Te3 glasses

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Czechoslovak Journal of Physics B Aims and scope

Abstract

The average heat of atomization of semiconducting glasses on the As2Te3 base, containing silicon, germanium and thallium is calculated from the heats of atomization of constituting elements. The average heat of atomization is correlated with the intrinsic energy gap and the transformation temperature of the studied glasses. The linear dependence between the energy gap, the transformation temperature and the average heat of atomization is found for As2Te3 glasses with silicon, germanium and thallium and is correlated with the binding energy between the constituting atoms.

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Authors and Affiliations

  1. Institute of Solid State Physics, Czechosl. Acad. Sci., Prague, Cukrovarnická 10, 162 53, Praha 6, Czechoslovakia

    L. Štourač & A. Hrubý

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  1. L. Štourač
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  2. A. Hrubý
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Štourač, L., Hrubý, A. On the relation between the gap, the transformation temperature and the average heat of atomization of As2Te3 glasses. Czech J Phys 23, 1077–1083 (1973). https://doi.org/10.1007/BF01586846

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  • DOI: https://doi.org/10.1007/BF01586846

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