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The generation of free carriers in CdTe by radiation

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Czechoslovak Journal of Physics B Aims and scope

Abstract

This paper presents the results of the quantum efficiency measurement of CdTe over the photon energy range 1·5–4·5 eV obtained from the photovoltaic effect on special photodiodes. There are two “kinks” observable in the increase of the quantum efficiency which can be explained on the basis of the band structure of CdTe. The first is due to electron, the second due to hole ionization.

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Authors and Affiliations

  1. Faculty of Mathematics and Physics, Charles University, Prague, Ke Karlovu 5, Praha 2, Czechoslovakia

    J. Toušek

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  1. J. Toušek
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Additional information

I wish to thank Prof. E.Klier and Doc. R.Kužel, CSc. for their valuable discussions and Ing. P.Polívka, CSc. for the preparation of CdTe single crystals.

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Toušek, J. The generation of free carriers in CdTe by radiation. Czech J Phys 23, 1403–1409 (1973). https://doi.org/10.1007/BF01586529

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  • DOI: https://doi.org/10.1007/BF01586529

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