Abstract
Thin silicon monocrystals are prepared by cathodic sputtering. Periodical deflection of the ion beam results in an area of 50–70 μ diameter of constant thickness. These crystals can therefore be used for quantitative measurements in transmission experiments with electrons. As an example the variation of the electron diffraction pattern with the thickness of the examined crystals is given. A method to measure the thickness of the crystals (700–14000 Å) by means of light interference patterns is described.
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Herrn Prof. Dr. H.Raether danke ich für die Anregung zu dieser Arbeit und für die klärenden Diskussionen der Ergebnisse sowie Herrn Dipl.-Phys. M.Harsdorff für zahlreiche wertvolle Hinweise. Die Deutsche Forschungsgemeinschaft stellte in dankenswerter Weise Mittel zur Beschaffung von Apparaten zur Verfügung.
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Grambow, I. Dünne Siliziumeinkristalle und ihre Elektroneninterferenzen. Z. Physik 187, 197–209 (1965). https://doi.org/10.1007/BF01579585
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DOI: https://doi.org/10.1007/BF01579585