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Active two-terminal devices as local oscillators for low-noise receiver systems at submillimeter wave frequencies

Aktive Zweipol-Bauelemente als Lokaloszillatoren für rauscharme Empfängersysteme im Frequenzgebiet der Submillimeterwellen

  • Terahertz-Technology
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Contents

The power capabilities of three different two-terminal devices, GaAs IMPATT diodes, InP Gunn devices and GaAs TUNNETT diodes are evaluated. Two different selective etching technologies have been employed to fabricate devices on either a diamond heat sink or an integral heat sink. The reported RF power levels in fundamental mode are 20 mW at 120 GHz and 15 mW at 135 GHz for D-band GaAs IMPATT diodes, 21 mW at 120 GHz, 17 mW at 133 GHz and 8 mW at 155 GHz for D-band InP Gunn devices and up to 35 mW around 103 GHz for W-band GaAs TUNNETT diodes. Typical de to RF conversion efficiencies range from 0.9% up to over 4.0%. In second harmonic mode power levels of 0.25 mW at 223 GHz were measured from TUNNETT diodes and 0.4 mW at 220 GHz from a Gunn device.

Übersicht

Die Leistungsfähigkeit dreier verschiedener Zweipolbauelemente, GaAs-IMPATT-Dioden, InP-Gunn-Bauelemente und GaAs-TUNNETT-Dioden, wird untersucht. Zwei unterschiedliche Herstellungsverfahren mit selektivem Ätzen wurden eingesetzt, um Bauelemente auf einer Diamant- bzw. integrierten Wärmesenke herzustellen. Hochfrequenzausgangsleistungen von 20 mW bei 120 GHz und 15 mW bei 135 GHz wurden mit GaAs-IMPATT-Dioden für das D-Band erzielt, 21 mW bei 120 GHz, 17 mW bei 133 GHz und 8 mW bei 155 GHz mit InP-Gunn-Bauelementen für das D-Band und bis zu 35 mW um 103 GHz mit GaAs-TUNNETT-Dioden für das W-Band. Typische Hochfrequenzwirkungsgrade lagen zwischen 0,9% und über 4%. Bei der ersten Oberwelle wurden mit TUNNETT-Dioden HF-Leistungen von 0,25 mW bei 223 GHz gemessen und 0,4 mW bei 220 GHz mit einem Gunn-Bauelement.

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Authors and Affiliations

  1. Center for Space Terahertz Technology Department of Electrical Engineering & Computer Science, The University of Michigan, 48109-2122, Ann Arbor, Michigan, USA

    H. Eisele, G. I. Haddad & C. Kidner

  2. Department of Electrical Engineering, State University of New York at Stony Brook, 11794-2350, Stony Brook, NY, USA

    R. Kamoua

Authors
  1. H. Eisele
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  2. R. Kamoua
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  3. G. I. Haddad
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  4. C. Kidner
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Eisele, H., Kamoua, R., Haddad, G.I. et al. Active two-terminal devices as local oscillators for low-noise receiver systems at submillimeter wave frequencies. Archiv f. Elektrotechnik 77, 15–19 (1993). https://doi.org/10.1007/BF01574916

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  • DOI: https://doi.org/10.1007/BF01574916

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