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Untersuchungen und Erfahrungen mit abschaltbaren Leistungshalbleitern

Measurements and experiences with turn-off semiconductor power devices

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Übersicht

Vorgestellt werden neue abschaltbare Leistungshalbleiter (GTO, bipolare Transistoren, IGT, MOSFET, SIT und schnelle Dioden), die in den letzten Jahren die Leistungselektronik in allen Leistungsbereichen entscheidend verändert haben. Diskutiert werden das Schaltverhalten (Ein- und Ausschalten) und der sich daraus ergebende Frequenzbereich. PWM-Wechselrichter mit 20 kHz Pulsfrequenz mit verschiedenen Transistortypen werden verglichen: hier hat der IGT die besten Eigenschaften. Steuergeneratorschaltungen und Steuerleistungsbedarf werden angegeben. Für GTOs werden verlustarme Beschaltungen erörtert. Anwendungen und Entwicklungstrends werden aufgezeigt.

Contents

Presented are new turn-off semiconductor power devices (GTO, bipolar transistor, IGT, MOSFET, SIT and fast recovery diodes), which have changed decisively power electronics in all power ranges during the last years. Discussed are the switching behavior (turn-on and turn-off) and the applicable frequency range. PWM-inverters with different types of transistors are compared; here the IGT has the best properties. Gate driver circuits and gate power demand are given. Low-loss snubbers for GTOs are presented. Applications and development trends are shown.

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  1. Institut f. Allg. Elektrotechnik, Technische Universität Berlin, Einsteinufer 19, D-1000, Berlin 10

    K. Heumann

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Herrn Prof. Dr. phil. nat. W. Gerlach zum 60. Geburtstag gewidmet.

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Heumann, K. Untersuchungen und Erfahrungen mit abschaltbaren Leistungshalbleitern. Archiv f. Elektrotechnik 72, 95–111 (1989). https://doi.org/10.1007/BF01573643

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