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Spatial distributions of boron in silicon obtained by combination of two-dimensional bevelling and autoradiography

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Abstract

Bevelling under shallow angles in two dimensions is applied to enlarge the spatial distribution of boron implanted into silicon. The exposed enlarged distribution is then recorded by neutron autoradiography. From the measured distribution, the true boron distribution is obtained by shear transformation and differentiation. An example is given.

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Authors and Affiliations

  1. Department FD, Hahn-Meitner-Institute Berlin, Glienicker Strasse 100, D-14109, Berlin, Germany

    D. Fink

  2. Solid State Materials Technology Ltd., P.O. Box 879, 3152, Glen Waverley, Victoria, Australia

    S. Koul

  3. Fraunhofer-Institute für Festkörpertechnologie, Paul-Gerhard-Allee 42, D-81245, Munich, Germany

    H. Kranz

Authors
  1. D. Fink
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  2. S. Koul
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  3. H. Kranz
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Fink, D., Koul, S. & Kranz, H. Spatial distributions of boron in silicon obtained by combination of two-dimensional bevelling and autoradiography. Appl. Phys. A 62, 13–17 (1996). https://doi.org/10.1007/BF01568081

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  • DOI: https://doi.org/10.1007/BF01568081

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