Abstract
The microwave waveguide method for contactless determination of the electron mobility and conductivity of thin active layers is reported. The method is based on relative measurements of the magnetic field dependences of the derivative of the reflection coefficient with respect to the magnetic field from a semiconductor wafer bridging the waveguide.
Experiments are performed on GaAs/AlGaAs heterostructures at microwave frequency ⧫ = 36.4 GHz and liquid nitrogen temperature. For the analysis of the experimental data the theoretical basis for arbitrary frequencies is developed. The main advantage of the proposed method is that this method enables one to determine material parameters - mobility and conductivity - without careful calibration of the microwave system and does not require the accurate measurements of the absolute values of the reflection coefficient and phase of the reflected wave.
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Baturina, T.I., Borodovski, P.A. & Studenikin, S.A. Microwave waveguide method for the measurement of electron mobility and conductivity in GaAs/AlGaAs heterostructures. Appl. Phys. A 63, 293–298 (1996). https://doi.org/10.1007/BF01567884
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DOI: https://doi.org/10.1007/BF01567884