Abstract
We present electroacoustic measurements of a p/n+ silicon solar cell as a function of the stimulating potential modulation frequency, gaining information on the different power dissipation sources within the device by means of thermal depth profiling. Theoretical calculations of the electroacoustic signal based on a reinterpretation of the Rosencwaig and Gersho model have also been performed, and the results of these calculations have been compared to the experimental data.
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