Abstract
Depth profiles of hydrogen implanted into crystalline silicon in random direction at different fluences have been measured by the15N technique and by SIMS. Whereas hydrogen implanted at a fluence of 1015 ions/cm2 shows some limited mobility, no such mobility is observed for higher implantation fluences. In these cases, ballistic computer codes describe the depth distributions well, within the ranges of both experimental and theoretical accuracy. Annealing up to 510 K does not change the hydrogen distributions.
Furthermore, high-fluence hydrogen implantation into silicon dioxide has been examined. There is some indication for radiation-enhanced diffusion during the implantation process. Upon subsequent thermal annealing, the hydrogen is found to diffuse, probably via a trapping/detrapping mechanism associated with an OH/H2 transformation of the hydrogen bonding.
This is a preview of subscription content, log in via an institution to check access.
Similar content being viewed by others
References
See, e.g., D. Fink, L. Wang, J. Martan: InFundamental Aspects of Inert Gases in Solids, ed. by S. E. Donelli, by J. H. Evans (Plenum, New York 1991) p. 67
M. Weiser, M. Behar, S. Kalbitzer, P. Oberschachtsiek, D. Fink, G. Frech: Nucl. Instrum. Methods B29, 587 (1987)
M.A. Briere, D. Bräunig: IEEE Trans. NS-37, 1658 (1990)
J. Krauser, F. Wulf, D. Bräunig: Non-Cryst. Solids (in press)
W.J. Choyke, R.B. Irwin, J.N. McGruer, J.R. Townsend, N.J. Doyle, B.O. Hall, J.A. Spitznagel, S. Wood: Nucl. Instrum. Methods209/210, 407 (1983)
J.P. Biersack, L.G. Haggmark: Nucl. Instrum. Methods174, 257 (1980)
J.P. Biersack: Z. Phys. A315, 95 (1982)
J.P. Biersack: Private communication (1975)
For recent detailed descriptions, see, T. Kie: Tiefenverteilung und Ausheizverhalten von implantierten6Li-Atomen in verschiedenen Metallen, Dissertation, Free University, Berlin (1955). For a rough overview of the basic physics, see also, J.R. Kaschny, L. Amaral, D. Fink, M. Behar: Radiat. Eff. Def. Solids125, 289 (1993)
L. Wang: Verteilung leichter Ionen in Festkörpern nach Implantation und thermischer Behandlung—Experimente und theoretische Untersuchungen. Dissertation, Free University, Berlin (1995)
The concept of saturable and unsaturable traps in diffusion simulations was introduced first by Chadderton. See, L. T. Chadderton: Radiat. Eff.8, 77 (1971)
For an overview about the technique of finite differences, see, e.g., G.D. Smith:Numerical Solution of Partial Differential Equations: Finite Difference Methods, 2nd edn. (Clarendon, Oxford 1978)
A.D. Marwick: InHydrogen in Semiconductors, ed. by J.I. Pankove, N.M. Johnson, Semicond. Semimet., Vol. 34 (Academic, New York 1991) Chap. 9, pp. 200–225
C. Herring, N.M. Johnson: InHydrogen in Semiconductors, ed. by J.I. Pankove, N.M. Johnson, Semicond. Semimet., Vol. 34 (Academic, New York 1991) Chap. 10, pp. 225–350
R.G. Wilson: Appl. Phys. Lett.49, 1375 (1986)
R.W. Lee: Phys. Chem. Glasses5, 35 (1964)
J.E. Shelby: J. Appl. Phys.48, 3387 (1977)
G. Braun, J. Kirchhoi, W. Heitmann: J. Opt. Commun.14, 25 (1993)
D.L. Griscom: J. Appl. Phys.58, 2524 (1985)
R.H.J. Fastenau, L.M. Caspers, A. van Veen: Phys. Stat. Sol. (a)34, 277 (1976)
D. Fink, J.P. Biersack, H.D. Carstanjen, F. Jahnel, K. Muller, H. Ryssel, A. Osei: Radiat. Eff.77, 11 (1983)
M. Stutzmann, J. Chevallier: Physica B1–4, 170 (1991)
S.T. Picraux, J. Bottiger, N. Rud: Appl. Phys. Lett.28, 179 (1976)
See, e.g., H.U. Jäger: Nucl. Instrum. Methods B15, 748 (1986)
T. D. Rossing, M. Kaminsky, S.K. Das: J. Nucl. Mater.63, 325 (1976)
S.R. Hofstein: IEEE Trans. ED-14, 749 (1967)