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Barrier-height non-uniformities of PtSi/Si(111) Schottky diodes

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Abstract

The forward current-voltage characteristics of PtSi Schottky contacts on epitaxial n-type Si (111) is studied in the temperature range from 100 to 300 K. A current contribution in excess to that predicted by thermionic emission diffusion theory is caused by a few thousand patches of reduced Schottky barrier height in a device area of 3.14 mm2. The typical lateral extent of these patches is 70–250 nm. It correlates with the size of surface bumps observed. The number of patches is reduced upon increasing the silicidation temperature up toT siI=550°C. Possible non-uniformities of the typical crystallite grain size of 20 nm are not resolved due to effective pinch-off.

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Authors and Affiliations

  1. Institut für Angewandte Physik, Universität Erlangen-Nürnberg, Staudtstrasse 7, D-91058, Erlangen, Germany

    P. Lahnor, K. Seiter & M. Schulz

  2. Institut für Werkstoffwissenschaften, Universität Erlangen-Nürnberg, Cauerstrasse 6, D-91058, Erlangen, Germany

    W. Dorsch

  3. Max-Planck-Institut für Mikrostrukturphysik, Weinberg 2, D-06120, Halle/Saale, Germany

    R. Scholz

Authors
  1. P. Lahnor
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  2. K. Seiter
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  3. M. Schulz
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  4. W. Dorsch
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  5. R. Scholz
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Lahnor, P., Seiter, K., Schulz, M. et al. Barrier-height non-uniformities of PtSi/Si(111) Schottky diodes. Appl. Phys. A 61, 369–375 (1995). https://doi.org/10.1007/BF01540110

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  • DOI: https://doi.org/10.1007/BF01540110

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