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Relationship between the oxidation resistance and the high-temperature strength of silicon carbide materials

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Oxidation is the reason for the decrease in the ultimate strength of the self-bonded silicon carbide at temperatures exceeding 1000°C.

Recrystallized silicon carbide possesses high oxidation resistance and retains its initial strength up to 1400°C.

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Authors and Affiliations

  1. Kiev Polytechnic Institute, USSR

    Yu. G. Gogotsi & V. A. Lavrenko

Authors
  1. Yu. G. Gogotsi
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  2. V. A. Lavrenko
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Translated from Ogneupory, No. 5, pp. 25–28, May, 1985.

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Gogotsi, Y.G., Lavrenko, V.A. Relationship between the oxidation resistance and the high-temperature strength of silicon carbide materials. Refractories 26, 233–236 (1985). https://doi.org/10.1007/BF01539583

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  • DOI: https://doi.org/10.1007/BF01539583

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