Abstract
X-ray diffraction and electron diffraction techniques indicate that Cdx Zn1−xSe thin films on glass substrates have a polycrystalline nature, with sphalerite structure for x≤0.5 and wurtzite structure for x≥0.6. The crystalline size in each composition increases with increasing the film thickness. The room temperature dark resistivity π varies from one composition to another showing a transition at x=0.55
The temperature dependence of π of the deposited films revealed two conduction mechanisms, one below 352 K due to shallow levels, surface states, and defects introduced during the film growth, and over 352 K due to deep-level ionization following the ordinary semiconducting behaviour.
The thermal activation energy of the free charge carriers decreases linearly with increasing the molar fraction x of the CdSe content up to x=0.55, above which it increases with increasing x.
The optical constants of Cdx Zn1−xSe thin films of different compositions were determined in the spectral range 400–2000 nm. The analysis of the absorption coefticient at and near the absorption edge indicates the existence of allowed direct transition energy gaps decreasing with increasing x.
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References
R.K. Willardson, A.C. Beer:Semiconductors and Semimetals, Vol. 5 (Academic, New York 1970)
C.E. Hurtz: Appl. Phys. Lett.8, 121 (1966)
S.V. Svechnikov, E.B. Kaganovich: Thin Solid Films66, 41 (1980)
B. Ray: InII–VI Compounds (Pergamon, London 1969). p. 172
N.I. Vitrikhovskii, I.B. Mizetskaya: Sov. Phys.-Solid State1, 358 (1959)
M. Aven, J.S. Prener: InPhysics and Chemistry of II–VI Compounds (North-Holland, Amsterdam 1967) p. 613
R.J. Phelan: IEEE Proc.54, 1119 (1966)
M. Aven: Appl. Phys. Lett.7, 146 (1965)
F.F. Morehead, G. Mandel: Appl. Phys. Lett.5, 53 (1964)
S. Tolansky: InMultiple-Beam Interference Microscopy of Metals (Academic, London 1970) 55
B.D. Cullity:Elements of X-ray Diffraction, 2nd edn. (Addison Wesley, New York 1978) p. 327
V.A. Sanitarov, Yu.K. Ezhovskii, I.P. Kalinkin: Inorg. Mater.12, 1584 (1976)
K.V. Shalimova, A.F. Botnev, V.A. Dmitriev, N.Z. Kognovitskaya, V.V. Starostin: Sov. Phys. Cryst.14, 531 (1970)
V.A. Sanitarov, Yu.K. Ezhovskii, I.P. Kalinkin: Sov. Phys. J.1, 62 (1976)
M.M. El-Nahass, H.S. Soliman, N. El-Kadry, A.Y. Morsy, S. Yaghmour: J. Mater. Sci. Lett.7, 1050 (1988)
B.T. Kolomiets, Lin Chun-ting: Sov. Phys.-Solid State2, 154 (1960)
M.V. Kot, V.G. Tyrziu, A.V. Simashkevich, Yu.E. Maronchuk, V.A. Mshenskii: Sov. Phys.-Solid State4, 1128 (1962)
A.N. Krestovnikov, T.A. Valkova, A.F. Mikheenkova, I.A. Timoshin: Inorg. Mater.11, 811 (1975)
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Soliman, H.S., Ali, N.A. & El-Shazly, A.A. Structural, electrical and optical properties of Cdx Zn1−xSe thin films. Appl. Phys. A 61, 87–92 (1995). https://doi.org/10.1007/BF01538217
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DOI: https://doi.org/10.1007/BF01538217