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Applied Physics A

, Volume 61, Issue 1, pp 71–74 | Cite as

A slow positron lifetime study of the annealing behaviour of an amorphous silicon layer grown by MBE

  • J. Störmer
  • P. Willutzki
  • D. T. Britton
  • G. Kögel
  • W. Triftshäuser
  • W. Kiunke
  • F. Wittmann
  • I. Eisele
Article

Abstract

We have studied MBE grown amorphous silicon, which was recrystallized at different temperatures for one hour, with a pulsed positron beam. A positron lifetime of 538±10 ps in the as-grown state is attributed to microvoids containing at least 10 vacancies. An incompletely recrystallized sample annealed at 500°C shows an additional long lifetime from ortho-positronium (o-Ps) pick-off annihilation. The o-Ps component disappears for samples, recrystallized at 700°C and above, and the defect lifetime steadily decreases with higher annealing temperature until a value of 310 ps is reached for the layer annealed at 1200°C. This value is explained by positron trapping at dislocations or small vacancy defects stabilized by dislocations or impurities.

PACS

68.55 78.70 

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Copyright information

© Springer-Verlag 1995

Authors and Affiliations

  • J. Störmer
    • 1
  • P. Willutzki
    • 1
  • D. T. Britton
    • 1
  • G. Kögel
    • 1
  • W. Triftshäuser
    • 1
  • W. Kiunke
    • 2
  • F. Wittmann
    • 2
  • I. Eisele
    • 2
  1. 1.Institut für Nukleare FestkörperphysikUniversität der Bundeswehr MünchenNeubibergGermany
  2. 2.Institut für Physik, Fakultät für ElektrotechnikUniversität der Bundeswehr MünchenNeubibergGermany

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