Abstract
The scattering of phonons by neutral n-type impurities in silicon is studied. Following Keyes, who determined the phonon relaxation time for scattering by neutral impurities in n-type germanium, the relaxation time for the silicon band structure is developed. This scattering comes about due to the large effect of strain on the hydrogen-like donor ground-state energy level. The change in energy of the ground state due to the strain caused by phonons is calculated and the resulting phonon scattering relaxation rate is derived.
This is a preview of subscription content, log in via an institution to check access.
Similar content being viewed by others
References
J. F. Goff and N. Pearlman,Phys. Rev. 140:A2151 (1965).
R. W. Keyes,Phys. Rev. 122:1171 (1961).
R. W. Keyes and R. J. Sladek,Phys. Rev. 125:478 (1962).
W. Kohn, inSolid Stute Physics, Vol. 5, F. Seitz and D. Turnbull, eds. (Academic Press, New York, 1957).
J. M. Luttinger and W. Kohn,Phys. Rev. 97:869 (1955).
S. Pantelides,Rev. Mod. Phys. 50:797 (1978).
W. Kohn and J. M. Luttinger,Phys. Rev. 98:915 (1955).
H. Eyring, J. E. Walter, and G. E. Kimball,Quantum Chemistry (John Wiley and Sons, New York, 1944).
P. J. Price,Phys. Rev. 104:1223 (1956).
H. Fritzsche,Phys. Rev. 115:336 (1959).
H. Fritzsche,Phys. Rev. 120:1120 (1960).
R. L. Aggarwal and A. K. Ramdas,Phys. Rev. 140:1246 (1965).
C. Herring and E. Vogt,Phys. Rev. 101:944 (1956).
P. G. Klemens,Proc. Phys. Soc. (London) A68:1113 (1955).
P. G. Klemens, inSolid State Physics, Vol. 7, F. Seitz and D. Turnbull, eds. (Academic Press, New York, 1958).
D. P. White and P. G. Klemens,J. Appl. Phys. 71:4258 (1992)
J. S. Blakemore,Semiconductor Statistics (Dover, New York, 1987), p. 129.
Author information
Authors and Affiliations
Rights and permissions
About this article
Cite this article
White, D.P. Phonon sattering by nutral donors in n-type silicon. Int J Thermophys 15, 365–374 (1994). https://doi.org/10.1007/BF01441591
Received:
Issue Date:
DOI: https://doi.org/10.1007/BF01441591