Abstract
Measurements of the half-life of the 23.87 keV level in119Sn have been performed by delayed coincidence technique. Two different types of sources have been used in experiments with various detector combinations. A very pure source was made by implanting119mSn in a plastic scintillator by an isotope separator. This source could simultaneously be used as source and detector. The other source was made by simple drying of a drop of solution.
The mean value of the half-life of the 23.87 keV level from 21 measurements is found to beT 1/2=(18.03±0.07) ns.
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The authors wish to thank Drs. G. Weyer and B. Bengtson, Institute of Physics, University of Aarhus, Denmark who kindly performed the ion implantation work.
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Nylandsted Larsen, A., Mouchel, D. & Hansen, H.H. Half-life of the 23.87 keV level in119Sn. Z Physik A 294, 191–195 (1980). https://doi.org/10.1007/BF01435055
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DOI: https://doi.org/10.1007/BF01435055