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Local correlation of current density, radiant emittance and temperature within GaAsP light-emitting diodes

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Abstract

Two experimental methods are described which allow local and temporal investigations of radiant emittance and temperature within the active area of GaAsP lightemitting diodes. Resolution is in the order of 1 μm and 10 μs, respectively.

The measurements are correlated with theoretical calculations of the local current density. Non-uniformity and saturation are observed under pulsed operating conditions.

The results demonstrate the importance of local measurements, especially in the case of degradation studies, where current density and temperature are supposed to play a major role.

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Authors and Affiliations

  1. Institut für Physikalische Elektronik, Universität Stuttgart, Germany

    S. Metz & R. Maly

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  1. S. Metz
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  2. R. Maly
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Metz, S., Maly, R. Local correlation of current density, radiant emittance and temperature within GaAsP light-emitting diodes. Opto-electronics 6, 141–151 (1974). https://doi.org/10.1007/BF01419062

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  • DOI: https://doi.org/10.1007/BF01419062

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