Skip to main content
SpringerLink
Log in

Using the thermal runaway condition of a transistor to produce a time delay

  • Published:
Measurement Techniques Aims and scope

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Literature cited

  1. I. P. Stepanenko, Fundamentals of Transistor and Transistor Circuit Theory [in Russian], “Énergiya,” Moscow (1967).

    Google Scholar 

  2. I. F. Nikolaevskii, Operational Parameters and Application Features of Transistors [in Russian], Svyaz'izdat, Moscow (1963).

    Google Scholar 

  3. N. S. Kuznetsova and É. P. Niktin, Vestnik Svyazi, No. 1 (1967).

  4. Yu. A. Shifrin-Kryzhalovskii and V. S. Mitin, Thermal Stability of Transistors and the Reliability of Radioelectronic Apparatus [inRussian], “Sovet-skoe Radio,” Moscow (1966).

    Google Scholar 

Download references

Authors
  1. A. Ya. Druzhinin
    View author publications

    You can also search for this author in PubMed Google Scholar

Additional information

Translated from Izmeritel'naya Tekhnika, No. 5, pp. 74–75, May, 1970.

Rights and permissions

Reprints and permissions

About this article

Cite this article

Druzhinin, A.Y. Using the thermal runaway condition of a transistor to produce a time delay. Meas Tech 13, 745–747 (1970). https://doi.org/10.1007/BF01409134

Download citation

  • Received:

  • Issue Date:

  • DOI: https://doi.org/10.1007/BF01409134

Keywords

Search

Navigation