Abstract
The recombination radiation of bound excitons in ZnO-crystals (spectral range 3,38–3,35 eV at 4.2 °K) and the adjacent phonon-assisted spectrum have been studied at temperatures between 4.2 °K and 90 °K. The phonon-assisted spectrum changes its structure at about 30 °K. With increasing temperature the exciton lines shift toward smaller quantum energies (ΔE∼T 2) and their half widthH increases (H∼T 2). The line shift is explained by a band gap variation due to deformation potential coupling of the holes toTA phonons. The line width is explained by broadening of an infinitely sharp line under the influence of the mean square fluctuation of thermally generated crystal deformations. The influence of uniaxial stress on the spectral positions of the lines has been studied.
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Herrn Professor Dr. E.Mollwo möchte ich für die Überlassung dieser Arbeit und für wertvolle Diskussionen besonders danken.
Diese Arbeit wurde mit Leihgaben der Deutschen Forschungsgemeinschaft unterstützt.
Für die Überlassung der benötigten Mengen an flüssigem Helium bin ich der Firma Siemens AG (Forschungslabor Erlangen) sehr zu Dank verpflichtet.
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Solbrig, C. Das Emissionsspektrum gebundener Excitonen in Zinkoxydkristallen in Abhängigkeit von Temperatur und uniaxialer Verspannung. Z. Physik 211, 429–451 (1968). https://doi.org/10.1007/BF01404558
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DOI: https://doi.org/10.1007/BF01404558