Abstract
The persistent internal quadrupole moment which has been observed in Li-doped ZnO crystals is studied theoretically. The quadrupole moment is expressed in terms of relaxation coefficients and effective cross sections characterizing the scattering and capture processes of the photo carriers. Furthermore, it is related to the anisotropy of the mobility and of the persistent internal polarization.
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I thank Prof. Dr. E. Mollwo for stimulating my interest in problems connected with the photoconductivity of semiconductors and for many helpful comments. Discussions with Dr. R. Helbig, Dipl.-Phys. G. Pensl and Dipl.-Phys. C. Klingshirn are gratefully acknowledged. Furthermore, I thank Dr. H. Vestner for programming the computer-produced curves of Figs. 1, 2.
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Hess, S. Photo-induced persistent internal quadrupole moment of a semiconductor. Z. Physik 260, 385–394 (1973). https://doi.org/10.1007/BF01397963
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DOI: https://doi.org/10.1007/BF01397963