Abstract
The method of ion-implantation is applied to doping thin lead films with small amounts of manganese. The incident ion intensity is integrated to determine the concentration of magnetic impurities. A marked increase in film resistivity is caused by radiation damage induced in the host lattice and by resonance scattering of conduction electrons on the magnetic impurity sites. Both effects can be observed separately.
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Wir danken Herrn Prof. Dr. W. Buckel für die Anregung dieses Gemeinschaftsprojektes und seine wertvollen Ratschläge zur Lösung der auftretenden Probleme. Unser Dank gilt ferner der Deutschen Forschungsgemeinschaft für Bereitstellung apparativer Hilfsmittel.
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Geerk, J., Heim, G. & Kessler, J. Restwiderstand von Bleischichten nach Implantation von Manganionen. Z. Physik 242, 86–92 (1971). https://doi.org/10.1007/BF01395381
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DOI: https://doi.org/10.1007/BF01395381