Skip to main content
SpringerLink
Log in

Elektrodenanordnung zur Messung des Hall-Effekts an hochohmigen Halbleitern

  • Published:
Zeitschrift für Physik

Abstract

For measurements of the Hall-effect of high-ohmic samples a new arrangement of electrodes is given which keeps the resistance between the Hall-electrodes small. This method permits to determine the concentration of charge carriers in semiconductors which have mobilities much lower than 1 cm2/Vs. The usefulness of the method is tested for some solids.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Similar content being viewed by others

Author information

Authors and Affiliations

  1. II. Physikalischen Institut der Technischen Universität Berlin, FRG

    H. Gobrecht, A. Tausend & G. Clauss

Authors
  1. H. Gobrecht
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. A. Tausend
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. G. Clauss
    View author publications

    You can also search for this author in PubMed Google Scholar

Rights and permissions

Reprints and permissions

About this article

Cite this article

Gobrecht, H., Tausend, A. & Clauss, G. Elektrodenanordnung zur Messung des Hall-Effekts an hochohmigen Halbleitern. Z. Physik 176, 155–158 (1963). https://doi.org/10.1007/BF01380582

Download citation

  • Received:

  • Issue Date:

  • DOI: https://doi.org/10.1007/BF01380582

Search

Navigation