Zur plastischen Verformung von Germanium und InSb

Abstract

The lower yield stress of Germanium and InSb is shown to be proportional to the cube root of the strain rate and to a Boltzmann temperature factor with one third of the activation energy of the dislocation velocity. The stationary creep rate then depends on the applied stressτ asτ ³ and has the same activation energy as the dislocation velocity. These results follow from the “core diffusion” model of dislocation motion in the diamond structure when one considers elastic dislocation interaction.