Abstract
Thermo-electron-emission (TE), thermo-luminescence (TL), and induced photoelectron-emission (IPE) of ZnS were investigated after electron bombardment. In contrary to other substances TE and TL of ZnS are of different origin. TL is caused by traps within the forbidden energy gap in the interior of the crystal, whereas a sorption layer on the crystal surface is responsible for TE. IPE is caused by a third mechanism.
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Auszug aus D 26.
Herrn Professor Dr. W.Hanle und Herrn Priv.-Doz. Dr. A.Scharmann danke ich für die Anregung dieser Arbeit und stete Förderung, Herrn Dr. E.A.Schwager und Herrn Dr. H.Gerstner für mancherlei Hilfe und der Deutschen Forschungsgemeinschaft für die Bereitstellung von Mitteln.
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Behmenburg, W. Thermoelektronen- und induzierte Photoelektronenemission bei Zinksulfid. Z. Physik 164, 222–228 (1961). https://doi.org/10.1007/BF01377810
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DOI: https://doi.org/10.1007/BF01377810