Abstract
The asymmetric random walk method is used to find the time dependence of the density of free charge carriers in a chain containing traps and neutral barriers, assuming a strong electric field. Fluctuations in the density of defects are taken into account exactly. The kinetics of the density decay has two stages: fast exponential decay at small times and slow decay (-[ln(t) + const]t-α, where a ≪ l is a combination of the parameters of the system) at long times. It is also shown that in the presence of barrier defects the asymptotic forms of the decrease in the number of charge carriers due to capture by traps and due to germinal recombination are the same.
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Institute of Theoretical Physics, Academy of Sciences of the Ukrainian SSR, Kiev. Translated from Teoreticheskaya i Éksperimental'naya Khimiya, Vol. 27, No. 2, pp. 129–133, March–April, 1991. Original article submitted May 21, 1990.
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Onipko, A.I. Capture and recombination of charge carriers in a strong electric field in quasi-one-dimensional crystals with scattering centers. Theor Exp Chem 27, 121–124 (1991). https://doi.org/10.1007/BF01372459
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DOI: https://doi.org/10.1007/BF01372459