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Photoluminescence and gain spectroscopy of highly excited epitaxial GaN-layers

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Zeitschrift für Physik B Condensed Matter

Abstract

The spectra of photoluminescence and optical gain of GaN have been measured at low temperatures under N2-laser excitation.

At low excitation levels (I exc≲104W cm−2) we observe free and bound exciton recombination. At intermediate excitation (I exc≈105W cm−2), inelastic exciton-exciton scattering processes show up. At the highest excitation levels (I exc≳106 W cm−2) we report here for the first time the emission from an electron-hole plasma.

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Author notes

  1. R. Dai

    Present address: Changchun Institute of Physics, Academy of Sciences, Changchun, The Peoples Republic of China

  2. W. Zhuang

    Present address: Institut of Semiconductors, Academy of Sciences, Beijing, The Peoples Republic of China

Authors and Affiliations

  1. Max-Planck-Institut für Festkörperforschung, Heisenbergstrasse 1, D-7000, Stuttgart, Federal Republic of Germany

    R. Dai

  2. Physikalisches Institut der Universität, Praffenwaldring 57, D-7000, Stuttgart, Federal Republic of Germany

    W. Zhuang

  3. Institut für Angewandte Physik der Universität, Kaiserstrasse 12, D-7500, Karlsruhe, Federal Republic of Germany

    K. Bohnert

  4. Physikalisches Institut der Universität, Robert-Mayer-Strasse 2-4, D-6000, Frankfurt/Main, Federal Republic of Germany

    C. Klingshirn

Authors
  1. R. Dai
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  2. W. Zhuang
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  3. K. Bohnert
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  4. C. Klingshirn
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Dai, R., Zhuang, W., Bohnert, K. et al. Photoluminescence and gain spectroscopy of highly excited epitaxial GaN-layers. Z. Physik B - Condensed Matter 46, 189–192 (1982). https://doi.org/10.1007/BF01360292

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  • DOI: https://doi.org/10.1007/BF01360292

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