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Die Temperaturabhängigkeit des Bandabstandes von Bleiselenid, gemessen an photoleitenden Schichten

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Zeitschrift für Physik

Abstract

The temperature dependence of spectral distribution of photoconductivity was measured on evaporated polycrystalline layers of lead-selenide in the range from 80 to 300 °K. The method ofBardeen, Blatt andHall was used, to calculate the band gap for direct and indirect transitions. A linear positive temperature coefficient was obtained for both transitions. The values areβ dir=+(4.5±0.2) · 10−4 eV/°K andβ ind=+(3.0±0.2)· 10−4eV/°K.

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Die Arbeit wurde durch die Fraunhofer- Gesellschaft zur Förderung der angewandten Forschung e. V. finanziell unterstützt, wofür auch an dieser Stelle gedankt sei.

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Gobrecht, H., Seeck, S. & Tretter, W.D. Die Temperaturabhängigkeit des Bandabstandes von Bleiselenid, gemessen an photoleitenden Schichten. Z. Physik 197, 1–7 (1966). https://doi.org/10.1007/BF01333080

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  • DOI: https://doi.org/10.1007/BF01333080

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