Skip to main content
SpringerLink
Log in

Inelastic electron tunneling spectroscopy on MOS structures with very thin oxide films

  • Published:
Zeitschrift für Physik B Condensed Matter

Abstract

Inelastic electron tunneling spectroscopy at 4.2 K was used to investigate the defect structure of MOS capacitors with very thin SiO2 films. Samples were degeneratelyP-andB-doped Si substrates, oxidized in O2 at 600°C and provided with evaporated Pb, Au, In, Al or Mg electrodes. The observed peaks in the second derivative of theI-U characteristic were assigned to the excitation of phonons and of vibrational modes of the dopants and impurities. The results were found to correlate with infrared data. In addition, a distinct effect of Si/SiO2 interface states on the characteristic was found.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Similar content being viewed by others

References

  1. Schein, L.B., Dale Compton, W.: Appl. Phys. Lett.17, 236 (1970)

    Google Scholar 

  2. Cullen, D.E., Wolf, E.L., Dale Compton, W.: Phys. Rev. B2, 3157 (1970)

    Google Scholar 

  3. Tsui, D.C., Dunkelberger, L.N.: Appl. Phys. Lett.18, 200 (1971)

    Google Scholar 

  4. Tao, T.F., Hsia, Y.: Appl. Phys. Lett.13, 291 (1968)

    Google Scholar 

  5. Freeman, L.B., Dahlke, W.E.: Solid State Electron.13, 1483 (1970)

    Google Scholar 

  6. Kar, S., Dahlke, W.E.: Solid State Electron.15, 221 (1972)

    Google Scholar 

  7. Sze, S.M.: Physics of semiconductor devices. Bell Laboratories. New York: Wiley-Interscience Publication 1981

    Google Scholar 

  8. Kar, S.: Solid State Electron.18, 169 (1975)

    Google Scholar 

  9. Ewert, S.: Festkörperprobleme. Grosse, P. (ed.). Vol. 24, p. 73. Braunschweig. Vieweg 1984

    Google Scholar 

  10. Hrostowski, H.J., Kaiser, R.H.: Phys. Rev.107, 966 (1957)

    Google Scholar 

  11. Smith, S.D., Angress, J.F.: Phys. Lett.6, 131 (1963)

    Google Scholar 

  12. Newman, R.C., Willis, J.B.: J. Phys. Chem. Solids26, 373 (1965)

    Google Scholar 

  13. Anderson, G.W., Schmidt, W.A., Comas, J.: Electrochem. Soc. Solid State Sci. Technol.125, 424 (1978)

    Google Scholar 

  14. Pliskin, W.A.: Semiconductor silicon 1973. 2nd Int. Symp. on Silicon Materials-Science and Technology, Chicago. Huff, H. (ed.), p. 506 (1973)

  15. Grosse, P.: Proc. of 3rd Int. Conf. on Infrared Physics. ETH Zürich. Ruegsegger, W., Kneubühl, F.K. (eds.), p. 26 (1984)

  16. Pliskin, W.A.: J. Vac. Sci. Technol.14, 1064 (1977)

    Google Scholar 

  17. Dawber, P.G., Elliott, R.J.: Proc. Phys. Soc.81, 453 (1963)

    Google Scholar 

  18. Wolf, E.L.: Phys. Rev. Lett.20, 204 (1968)

    Google Scholar 

  19. Davis, L.C., Duke, C.B.: Phys. Rev.184, 764 (1969)

    Google Scholar 

  20. Pepper, M.: Solid State Phys.13, L 709 (1980)

    Google Scholar 

  21. Balk, P., Aslam, M., Young, D.R.: Solid State Electron.27, 709 (1984)

    Google Scholar 

  22. Bell, L.D., Coleman, R.V.: Phys. Rev. B30, 4120 (1984)

    Google Scholar 

Download references

Author information

Authors and Affiliations

  1. 2. Physikalisches Institut/Sonderforschungsbereich 202, Rhein.-Westfälische Technische Hochschule Aachen, Templergraben 55, D-5100, Aachen, Germany

    H. -G. Busmann, S. Ewert, W. Sander & K. Seibert

  2. Institut für Halbleitertechnik/Sonderforschungsbereich 202, Rhein.-Westfälische Technische Hochschule Aachen, Templergraben 55, D-5100, Aachen, Germany

    P. Balk & A. Steffen

Authors
  1. H. -G. Busmann
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. S. Ewert
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. W. Sander
    View author publications

    You can also search for this author in PubMed Google Scholar

  4. K. Seibert
    View author publications

    You can also search for this author in PubMed Google Scholar

  5. P. Balk
    View author publications

    You can also search for this author in PubMed Google Scholar

  6. A. Steffen
    View author publications

    You can also search for this author in PubMed Google Scholar

Rights and permissions

Reprints and permissions

About this article

Cite this article

Busmann, H.G., Ewert, S., Sander, W. et al. Inelastic electron tunneling spectroscopy on MOS structures with very thin oxide films. Z. Physik B - Condensed Matter 59, 439–443 (1985). https://doi.org/10.1007/BF01328855

Download citation

  • Received:

  • Issue Date:

  • DOI: https://doi.org/10.1007/BF01328855

Keywords

Search

Navigation