Abstract
Charged impurities inserted in an electron gas in strong magnetic fields and at low temperatures are considered. Using the random phase and the generalized Born approximations, a self-consistent calculation of the screening of the impurities and the broadening of the electronic energy levels due to the scattering by these impurities is presented. Concrete results obtained in numerical form show that for typical semiconductors the anisotropy of te screening induced by the magnetic field is strongly reduced by collisional damping. The screening length, however, depends rather strongly on the field.
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On leave of absence from the Department of Physics, University of Tokyo, Tokyo, Japan.
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Ono, Y., Hajdu, J. Screening of impurities in strong magnetic fields. Z Physik B 33, 61–67 (1979). https://doi.org/10.1007/BF01325814
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DOI: https://doi.org/10.1007/BF01325814