Abstract
Sn—SnO x —Sn tunneling junctions were prepared by thermal oxidation of vacuum deposited Sn-films. The thickness growth of the oxide was followed by ellipsometric measurements. From logarithmic conductivity measurements the barrier heights were determined. The tunneling characteristic could be well described by the two-band-tunneling model using a value of 0.14 for the ratio of the effective masses in the oxide and the metal.
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Wehr, H., Knorr, K. Oxide growth and tunneling characteristics of Sn-SnO x -Sn junctions. Z Physik B 33, 21–24 (1979). https://doi.org/10.1007/BF01325809
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DOI: https://doi.org/10.1007/BF01325809