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Electrophysical properties of zinc-sulfide films obtained by high-frequency magnetron sputtering

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Abstract

The structure and electrophysical properties of zinc-sulfide films obtained by high-frequency magnetron sputtering are investigated. It is shown that the electrical strength of the films is no less than 106 V·cnr−1, the width of the forbidden band is 3.2–3.3 eV, and the refractive index is 1.8. The films are tested as electroluminescent layers in thin-film electroluminescent emitters. Luminescence with a brightness of 150 cd/m2 is obtained.

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Authors and Affiliations

  1. Tomsk Institute of Automated Control Systems and Radioelectronics, USSR

    P. I. Antonenko, Sh. M. Abdrashitov & P. E. Troyan

Authors
  1. P. I. Antonenko
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  2. Sh. M. Abdrashitov
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  3. P. E. Troyan
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Additional information

Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 6, pp. 29–32, June, 1990.

It remains to thank A. A. Miller for perfecting the electron-microscope investigations.

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Antonenko, P.I., Abdrashitov, S.M. & Troyan, P.E. Electrophysical properties of zinc-sulfide films obtained by high-frequency magnetron sputtering. Soviet Physics Journal 33, 485–487 (1990). https://doi.org/10.1007/BF01325003

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  • DOI: https://doi.org/10.1007/BF01325003

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