Abstract
Conductance fluctuations are studied in twodimensional mesoscopic electron system with a two-hold valley degeneracy (n v =2), which corresponds to the inversion layer of Si-MOSFET formed in (1,0,0) plane. It is shown that the intervalley scattering modifies conductance fluctuations depending on the ratio, Min {τ c , τ T }/τ v , where τ v = (τ′ − 2τ)/2 and τ c , τ T , τ′ and τ are, respectively, system traversal time, thermal diffusion time, intervalley scattering time and total life time of electrons. Conductance fluctuations are no longer universal and vary from δG univ ≡ 0.862·e 2/h to {ie223-5} at low temperatures even for isotropic systems. The conductance fluctuations increase with decreasing system size, increasing electron density and increasing intervalley scattering time. The effect of intervalley scattering is essentially the same as that of intersubband scattering as previously reported. At finite temperatures where τ T ≫ τ c , the intervalley scattering modifies the fluctuations through the change in the energy correlation range to results in the reduction of the conductance fluctuations. In Si-MOSFET formed in (1, 1, 1) plane, wheren v =6, more enhanced fluctuations are expected. Experimental studies are desired on theoretically predicted points.
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Iwabuchi, S. Enhancement of conductance fluctuations in two-dimensional mesoscopic electron systems with valley structures. Z. Physik B - Condensed Matter 98, 223–229 (1995). https://doi.org/10.1007/BF01324528
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DOI: https://doi.org/10.1007/BF01324528