Abstract
A fluctuation transport theory is applied to describe the mobility limiting effect of interface roughness scattering in semiconductor heterostructures. As an example we consider a high mobility transistor and compare electron scattering by interface roughness with Coulomb scattering processes by ions and dipole fluctuations. We show that the dynamical resistivity measurement provides detailed information about the autocorrelation of the interface morphology.
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References
Tešanović, Z., et al.: Phys. Rev. Lett.57, 2760 (1986)
Backes, W. et al.: Phys. Rev. B45, 8437 (1991)
Ando, T., Fowler, A.B., Stern, F.: Rev. Mod. Phys.54, 450 (1982)
Gerlach, E., Mycielski, J.: Verh. Dtsch. Phys. Ges.17, 746 (1982)
Gerlach, E., Mycielski, J.: private communication
Gerlach, E.: Phys. Statics. Solid. (b)158, 531 (1990)
Gerlach, E.: Phys. Statics. Solid. (b)157, 189 (1990)
Gerlach, E.: Phys. Statics. Solid. (b)167, 233 (1991)
Hertling, R.: Diploma thesis RWTH-Aachen 1993
Kaser, A., Gerlach, E.: Z. Phys. B97, 139 (1995)
Merzbacher, E.: Quantum mechanics, New York: Wiley 1970
Sakaki, H., et al.: Appl. Phys. Lett.51, 1934 (1987)
Bolognesi, C.R., Kroemer, H., English, J.H.: Appl. Phys. Lett.61, 213 (1992)
Gold, A.: Solid State Commun.60, 531 (1986)
Kohl, A., et al.: Vth International Conference on InP and related Materials, Paris (1993), IEEE Nr: 93Ch3276-3
Busch, H., Henzler, M.: Surf. Sci.167, 534 (1986)
Pukite, P.R., Lent, C.S., Cohen, P.I.: Surf. Sci.161, 39 (1986)
Kohl, A.: Private communication
Herman, M.A., Bimberg, D., Christen, J.: J. Appl. Phys.70, R1 (1991)
Gerlach, E. et al.: Phys. Statics Solid: (b)75, 553 (1976)
Gerlach, E., Grosse, P.: Festkörperprobleme XVII. Berlin, Heidelberg, New York: Springer 1977
Gerlach, E.: J. Phys. C19, 4585 (1986)
Kluttig, H.: Thesis RWTH-Aachen, Germany 1982