Abstract
Measurements of electrical resistivity, magnetoresistance and Hall effect on amorphous Ni100−x Ti x alloys withx=39, 43, 60, 65, 70, and 76 are presented. The resistivity at 4.2 K is in the range 210 μΔcm to 325 μΔcm. The Hall coefficient turns out to be negative for low Ti contents and positive for high Ti contents with values around −6×10−11 m3/As and +7×10−11 m3/As, respectively. At low temperatures, the temperature and magnetic field dependences of the quantities measured are analysed and discussed in terms of weak localisation and electron-electron interaction effects.
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Lindqvist, P., Kempf, A. & Fritsch, G. Electronic transport properties of amorphous NiTi alloys. Z. Physik B - Condensed Matter 88, 159–167 (1992). https://doi.org/10.1007/BF01323567
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DOI: https://doi.org/10.1007/BF01323567